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FQD12N20L N-Channel Power MOSFET 200 V, 9.0 A, 280 mΩ, TO-252

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This N-Channel enhancement mode power MOSFET is produced using a proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been specially tailored to reduce on-state resistance and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched-mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.

Features:

  • 9A, 200V, RDS(on) = 280mΩ(Max.) @VGS = 10 V, ID = 4.5A
  • Low gate charge ( Typ. 16nC)
  • Low Crss ( Typ. 17pF)
  • 100% avalanche tested
  • Low-level gate drive requirement allowing direct operation from logic drivers

Applications:

  • LED TV
  • CRT/RPTV
  • AC-DC Merchant Power Supply – Servers & Workstations
  • Workstation
  • Server & Mainframe
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