FQD12N20L N-Channel Power MOSFET 200 V, 9.0 A, 280 mΩ, TO-252

This N-Channel enhancement mode power MOSFET is produced using a proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been specially tailored to reduce on-state resistance and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched-mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.

Features:

• 9A, 200V, RDS(on) = 280mΩ(Max.) @VGS = 10 V, ID = 4.5A
• Low gate charge ( Typ. 16nC)
• Low Crss ( Typ. 17pF)
• 100% avalanche tested
• Low-level gate drive requirement allowing direct operation from logic drivers

Applications:

• LED TV
• CRT/RPTV
• AC-DC Merchant Power Supply – Servers & Workstations
• Workstation
• Server & Mainframe