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IRF3205 N Channel High Power MOSFET – 55V/110A/8mohm for Inverter Supply

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  • N-Channel Power MOSFET
  • Continuous Drain Current (ID) is 110A when VGS is 10V
  • Minimum Gate threshold voltage 2V
  • Drain to Source Breakdown Voltage: 55V
  • Low On-Resistance of 8.0mΩ
  • Gate-Source Voltage is (VGS) is ±20V
  • Rise time is 101ns
  • It is commonly used with Power Switching circuits
  • Available in To-220 package
  • Note: Complete Technical Details can be found in the IRF3205 datasheet.
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